光刻胶（又称为光致抗蚀剂），是微电子技术中实现精细图形线路生产的核心耗材。本文设计制备了几种新型i-线（365 nm）光刻胶。
（1）聚对羟基苯乙烯（PHS）在248 nm波长处具有良好的透明性，同时兼具较高的玻璃化转变温度（Tg）以及优异的碱溶性，但是聚对羟基苯乙烯自身具有柔韧性、附着力不足等特点。因此制备了聚对羟基苯乙烯-甲基丙烯酸酯共聚物，由于甲基丙烯酸基团的引入使得柔韧性和附着力明显提升，尝试用作化学增幅型i-线光刻胶的部分成膜树脂。本文利用4-乙酰氧基苯乙烯，分别与甲基丙烯酸叔丁酯、3-（三甲氧基甲硅基）甲基丙烯酸丙酯进行聚合，水解后得到两种在365 nm波长处具有良好透明性的共聚物，即P(HS-t-BMA)与P(HS-MPS)。并且制备了两种硫鎓盐光产酸剂，6-甲氧基-2-乙酰萘硫鎓盐（PAG-1）与蒽硫鎓盐（PAG-2）,紫外吸收光谱表明这两种硫鎓盐光产酸剂在365 nm波长处具有良好的光漂白性与适度的吸收。
将聚（对羟基苯乙烯-甲基丙烯酸叔丁酯）与光产酸剂PAG-1等组成i-线化学增幅型正性光刻胶，曝光量为200 mJ/cm2时，可获得分辨率为2 μm的线宽图形。将聚（对羟基苯乙烯-3-（三甲氧基甲硅基）甲基丙烯酸丙酯）与光产酸剂PAG-2等组成i-线化学增幅型负性光刻胶，当曝光量为300 mJ/cm2时，提高后烘温度至120 ℃，后烘120 s，显影后可得到分辨率为3 μm的清晰图形。实验结果表明提高后烘温度，该光刻胶的感度以及分辨率明显提升。
(2) 通过酯化反应与缩醛反应对PVA进行改性，制备了四种聚乙烯醇反应产物。并且利用二异氰酸酯与酚类化合物反应制备了一种氨基甲酸酯多酚化合物（CPC），将其进一步与2,1,4-重氮萘醌磺酰氯反应得到一种新型的i-线感光剂，即氨基甲酸酯-多酚-重氮萘醌磺酸酯（CPC-2,1,4-DNQ）。将制得的四种聚乙烯醇反应产物及商用酚醛树脂分别与感光剂CPC-2,1,4-DNQ或光自由基引发剂等组成i-线光刻胶，对光刻胶进行了初步曝光成像性能评价。
聚乙烯醇与苯酐通过酯化反应制得产物聚乙烯醇-苯酐（PVA-PA），将其与感光剂CPC-2,1,4-DNQ等组成i-线正性光刻胶。由于PVA-PA碱溶性太强，所配制的光刻胶抗碱性太弱，成像质量较差。因此尝试利用二碳酸二叔丁酯对部分羧基进行酯化，得到聚乙烯醇-苯酐反应产物的部分羧基酯化物（PVA-PA-t-BHP），将其与感光剂CPC-2,1,4-DNQ等组成i-线正性光刻胶，当曝光量为300 mJ/cm2时，得到清晰的5 μm线宽图形。
利用甲基丙烯酸缩水甘油酯（GMA）与产物PVA-PA中的部分羧基反应，得到产物聚乙烯醇-苯酐-甲基丙烯酸缩水甘油酯（PVA-PA-GMA），将其与小分子多官能度的甲基丙烯酸酯以及光自由基引发剂等组成紫外负性光刻胶。将光刻胶均匀涂布在覆铜片基上，曝光量为50~100 mJ/cm2时，2 wt%的硅酸钠溶液显影得到清晰的图形。将聚乙烯醇与对羟基苯甲醛通过缩醛反应制得产物聚乙烯醇-对羟基苯甲醛（PVA-PHBA），将其与感光剂CPC-2,1,4-DNQ等组成i-线正性光刻胶，当曝光量为800 mJ/cm2时，可得到线宽分辨率为5 μm的清晰图形。实验表明该光刻胶感度偏低是由于聚乙烯醇缩醛反应产物的碱溶性太弱。
最后测试了几种光刻胶在玻璃基板上的成像以及耐氢氟酸腐蚀性能，与酚醛树脂、聚对羟基苯乙烯衍生物组成的光刻胶相比，由PVA反应产物组成的光刻胶在玻璃上的附着力更强，耐氢氟酸腐蚀性能更好，具有潜在的应用前景。

Photoresist is the core consumable for fine graphic circuit production in microelectronics technology. Several novel i-line (365 nm) photoresists were designed and prepared in this paper. 
(1) Poly(4-hydroxy styrene)(PHS) has good transparency at 248 nm wavelength, high glass transition temperature (Tg) and excellent alkali solubility, but the characteristics of flexibility and adhesion of the polymer are poor. Therefore, poly(4-hydroxystyrene)-methacrylate copolymer was prepared and the flexibility and adhesion were significantly improved due to the introduction of methacrylate group, so it was tried to be used as film-forming resin for chemically amplified i-line photoresist. In this paper, p-acetoxystyrene was polymerized with tert-butyl methacrylate and 3-(trimethoxy-silicyl) propyl methacrylate, respectively. After hydrolysis reaction, two copolymers with good transparency at the wavelength of 365 nm were obtained, namely P(HS-t-BMA) and P(HS-MPS). In addition, two sulfonium salt photoacids, 6-methoxy-2-acetylnaphthyl sulfonium salt (PAG-1) and anthracene sulfonium salt (PAG-2), were prepared. Ultraviolet absorption spectra show that these two sulfonium salt photoacids have moderate absorption and good photobleaching properties at the wavelength of 365 nm.
The i-line chemically amplified positive photoresist was composed of poly (4-hydroxystylene-tert-butyl methacrylate) and photoacid generator PAG-1. The imaging pattern with a resolution of 2 μm line width was obtained at an exposure dose of 200 mJ/cm2. The i-line chemically amplified negative photoresist was composed of poly (4-hydroxystyrene 3-(trimethoxy-silicyl)methacrylate) and photoacid generator PAG-2. When the exposure dose was at 300 mJ/cm2, the postexposure baking(PEB) temperature raised to 120 ℃, and the PEB time increased to 120 s, patterns with the resolution of 3 μm line width were obtained after development. The experimental results show that the photosensitivity and resolution of the negative photoresist are obviously improved by increasing the PEB temperature. 
(2)Polyvinyl alcohol (PVA) was modified by esterification reaction and acetal reaction, and four kinds of polyvinyl alcohol reaction products were prepared. A carbamate polyphenol compound (CPC) was prepared by the reaction of diisocyanate with phenolic compounds. A new type of photoactive compound (PAC), carbamate polyphenol diazonaphthoquinone sulfonate (CPC-2,1,4-DNQ), was obtained by further reaction with 2,1,4-diazonaphthoquinone sulfonyl chloride. i-line photoresists were formed by the polyvinyl alcohol reaction products and commercial phenolic resin together with CPC-2,1,4-DNQ or photoradical initiators, and preliminary imaging properties of the photoresists were evaluated. 
The product polyvinyl alcohol-phthalic anhydride (PVA-PA) was prepared by esterification reaction of polyvinyl alcohol and phthalic anhydride, and i-line positive photoresist was formed by the PVA esterified product and CPC-2,1,4-DNQ. The alkali solubility of PVA-PA is too strong to obtain good imaging quality. Therefore, di-tert-butyl dicarbonate was used to esterify a part of the carboxyl group in PVA-PA to obtain reaction product (PVA-PA-t-BHP), which was combined with CPC-2,1,4-DNQ to form i-line positive photoresist. When the exposure dose was about 300 mJ/cm2, a clear pattern is obtained with 5 μm line width. 
Glycidyl methacrylate (GMA) was used to react with a part of carboxyl groups in the product PVA-PA to try to introduce methacrylate group into the PVA modified product polyvinyl alcohol-phthalic anhydride - glycidyl methacrylate (PVA-PA-GMA), which was combined with small molecule multi-functional methacrylate and photoradical initiator to form UV negative photoresist. The photoresist was uniformly coated onto the copper clad panel. When the exposure dose was at 50~100 mJ/cm2, the clear pattern was obtained after developed with 2 wt% sodium silicate solution. The polyvinyl alcohol-p-hydroxybenzaldehyde (PVA-PHBA) product was prepared by the acetal reaction of polyvinyl alcohol and p-hydroxybenzaldehyde. The product was combined with CPC-2,1,4-DNQ to form i-line positive photoresist. When the exposure dose was about 800 mJ/cm2, the imaging pattern was obtained with line width resolution of 5 μm. The experiments show that the photosensitivity of the photoresist is low because of the low alkali solubility of the PVA acetal reaction product.
Finally, the imaging performance and hydrofluoric acid corrosion resistance of several photoresists on glass substrate were tested. Compared with that of phenolic resin and poly (p-hydroxy styrene) derivatives, the photoresists composed of PVA reaction products have stronger adhesion and better hydrofluoric acid corrosion resistance on glass substrate, and have potential application prospect.