常见的正性光致抗蚀剂的成像原理是把碱溶性的基团如酚羟基和羧基保护起来成为可酸解离基团，如酯基或缩醛。这些可酸解离基团在光产酸作用下分解，重新变为碱可溶，可进行稀碱水显影成像。本次实验以二酸为主要反应物,以乙烯基乙醚和二氢吡喃为保护基,合成了两种新型小分子阻溶促溶化合物。该两种化合物结合酚醛树脂（BTB-18）、三嗪光产酸剂、有机染料等组成两种新型的正性光致抗蚀剂。将该正性光致抗蚀剂用作PS版感光成像材料具有高感度，高分辨率，显影宽容度好等的优点。有望用于高感度PS版、热敏CTP版材i-线光致抗蚀剂。

The lithography of positive photoresist can be based on the acidolysis of the protected groups by the photoacid generated by PAG. These acidolytic groups, such as protected phenyl hydroxyl groups or carboxylic acid groups, could be easily decomposed by acid and become alkali soluble again, and then the image can be obtained after developed with dilute aqueous base. Protection compounds(vinyl ethyl ether and dihydrogen pyran ) are used to react with dicarboxylic acid in this experiment. Thus obtained two novel dissolution inhibitors was mixed with phenolic resin(BTB-18), triazine PAG and dye, respectively, to form two novel positive photoresists. The two positive photoresist were investigated with good lithographic performance and high photosensitivity. The photosensitive compositions can be used for PS Plate, thermal CTP Plate and i-line photoresist.