我们北京师范大学新器件实验室已对外延电阻淬灭硅光电倍增器的基本特性进行了详细地表征，其中包括：电流-电压特性，暗计数率，光学串话，光子探测效率，恢复时间，单光子分辨谱和增益等。然而，我们实验室对硅光电倍增器的另外一个极为重要的特性——单光子时间分辨率——此前还没有进行系统而全面的研究，仅仅对1×1 mm2的SiPM器件进行过测量，并把其时间分辨特性应用于荧光寿命及拉曼散射测量。本论文的主要工作分为两大部分：一、外延电阻淬灭硅光电倍增器的时间分辨特性研究。首先，以SiPM的基本组成单元——单光子雪崩光电二极管（SPAD）为例，在前人的理论研究基础上，定性地分析总结了影响SPAD的单光子时间分辨率的各种因素；并且定量地分析了浅结小面积SPAD所能达到的单光子时间分辨率，其极限值在10 ps（FWHM）量级。而我们的外延电阻淬灭SiPM可以看作由浅结小面积的SPAD阵列组成，因此它的单光子时间分辨率的理论极限值也应该在10 ps（FWHM）的量级。其次，以高带宽数字示波器（LeCroy WaveRunner 640Zi）取代传统时间相关测量中冗杂的NIM插件，优化了测量电路，对不同面积的SiPM的单光子时间分辨率与工作偏压的关系进行了测量和表征，测得条形0.05×1 mm2 SiPM最小的单光子时间分辨率值为65 ps，0.12×0.12 mm2 SiPM器件的单光子时间分辨率为80ps。在兼顾器件面积和时间分辨率的条件下，以1×1 mm2 SiPM为例，研究了时间分辨率与光电子数目的关系。最后，通过测量位置灵敏硅光电倍增器（PS-SiPM）的时间分辨特性，发现了限制SiPM时间分辨率的一个重要因素——横向传输时间延迟，这个值大约为0.7 ps/μm。二、基于条形SiPM的时间相关-光子计数法测量拉曼散射光谱。本实验室之前已经开展了将SiPM用于拉曼散射方面的工作。本文针对一种专门用于光谱测量的条形SiPM，先对其基本特性进行了测量表征，它的单光子时间分辨率为65 ps，达到了很高的水平；然后基于时间相关多光子计数方法，利用条形SiPM进行时间分辨光谱测量，系统时间分辨率达到了130 ps。固体TNT粉末及四氯化碳（CCl4）溶液的拉曼特征谱线的峰本比分别为10.8:1, 420:1，与之前的结果相比有了极大的提高，这意味着SiPM在时间分辨光谱测量中的应用前景十分广阔。

Novel Device Laboratory (NDL, Beijing) had demonstrated the most specifications of SiPM with epitaxial quenching resistors in detail, e.g., current-voltage characteristics, dark counting rates, cross-talk, PDE, recovery time, single photon spectrum and gain. However, only the time resolving characteristics of 1×1 mm2 SiPM and its application in the Fluorescence lifetime and Raman scatterings have been investigated at NDL so far.In this thesis, a systematic and comprehensive study of the time resolving characteristics of SiPM with epitaxial quenching resistors has been done. And the progress of its application in time-resolved Raman scatterings also has been demonstrated. Hence, the main contents and outcomes of this thesis include:1. Time resolving characteristics of SiPM with epitaxial quenching resistors. Firstly, the various factors that affect single photon avalanche diode’s (SPAD) single photoelectron time resolution have been qualitatively analyzed and summarized based on previous theory due to SPAD could be seen as a basic micro cell of SiPM. And the SPAD with shallow junction and small active area can achieve the best single photoelectron time resolution in a level of 10 ps (FWHM) in theory. As a result, SiPM with epitaxial quenching resistors, which consists of hundreds to thousands of SPAD with shallow junction and small active area, has a theoretical limit of single photoelectron time resolution of 10 ps (FWHM). In addition, in order to obtain an accurate measurement of SPTR, a high speed digital oscilloscope (LeCroy Wave Runner 640Zi) was employed instead of the complicated Nuclear Instrument Modules (NIM). The electronic readout also has been optimized. The SPTR of SiPM as a function of over-voltage has been investigated. The best SPTRs of 0.12×0.12 mm2 SiPM and 0.05×1 mm2 SiPM are 80 ps and 65 ps respectively. Time resolution as a function of the number of photoelectrons detected by 1×1 mm2 SiPM has been demonstrated. And we have explored the impact of the electrode structure on time resolution. Finally, position-sensitive SiPM (PS-SiPM) demonstrated 0.7 ps/μm lateral transmission time delay which would be a limiting factor to the time resolving characteristics of SiPM with epitaxial quenching resistors.2. Measurements of time-resolved Raman scatterings with a 0.05×1 mm2 strip SiPM. This work is a progress of the SiPM’s application in detection of fluorescence lifetime and Raman scattering. Some important performance of the 0.05×1 mm2 strip SiPM has been characterized. A new time-resolved Raman scatterings detection method was established based on SiPM and time-correlated multi-photon counting technique. Thanks to the strip SiPM’s good SPTR, the sensitivity of single photon and fast response, the system achieved excellent time resolution of 130 ps which is much better than our previous results. The results of time-resolved Raman scatterings of solid TNT and CCl4 liquid show peak-background-ratios (PBRs) of 10.8:1 and 420:1, which are higher than previous results.