纳米复合薄膜是由硬质纳米晶粒镶嵌在非晶体中而形成的复合结构材料，具有独特的力学性能、耐磨抗疲劳性能和耐腐蚀磨损性能，在机械、海洋和航空航天领域展现出广阔的应用前景。本文利用磁过滤阴极真空弧沉积(FCVAD)技术分别制备了纳米晶Cu/非晶C和纳米晶TiAlN/非晶Si3N4复合薄膜，采用扫描电镜、透射电镜、X射线光电子能谱、拉曼光谱、电化学工作站和摩擦磨损试验机等分析测试方法研究了不同的C2H2和N2气体流量对Cu/C薄膜和TiAlSiN薄膜的成分、组织结构和性能的影响规律，采用SRIM程序模拟研究入射离子对沉积薄膜的作用，探究入射离子种类和能量对沉积层中射程、能量损失、损伤和溅射的影响规律，探讨入射离子能量在纳米复合薄膜沉积过程中的作用机制。

采用FCVAD技术改变C2H2气体流量制备了不同成分和结构的Cu/C薄膜，随着C2H2气体流量从10SCCM增加到20SCCM，薄膜C含量从24%增加到47%，横截面形貌由金属相转变为不明显的柱状结构，Cu晶相取向均表现为Cu(111)和Cu(200)，平均晶粒尺寸从47nm减小到23nm，ID/IG比值从1.42减小到1.13，薄膜残余应力从3.4GPa增大到4.8GPa，薄膜摩擦系数从0.477降低到0.136，磨损率从13.8×10-6mm3/N*m降低到0.8×10-6mm3/N*m。

采用FCVAD技术改变N2气体流量制备了不同成分和结构的TiAlSiN薄膜，随着N2气体流量从20SCCM增加到80SCCM，薄膜N含量从40.02%增加到54.76%，薄膜结构更加致密均匀，表面粗糙度为4.3-7.6nm。TiAlSiN薄膜中的硬质相主要为fcc-(Ti,Al)N，取向主要为(111)、(200)、(220)和(311)，随着N2气体流量增加，平均晶粒尺寸从26nm减小到16nm，40SCCM时TiAlSiN薄膜的力学性能表现出22.0GPa和28.04N的硬度和结合力峰值，在3.5wt% NaCl溶液中薄膜的自腐蚀电位为0.2229V，自腐蚀电流密度为0.89034×10-7A/cm2，在空气介质中的摩擦系数和磨损率为0.412和0.5×10-6mm3/N*m，在3.5wt% NaCl溶液中的摩擦系数和磨损率为0.28和7.5×10-6mm3/N*m，腐蚀介质中TiAlSiN薄膜摩擦系数的降低和磨损率的增加是腐蚀与磨损正交互作用的结果，加剧了薄膜的磨损。

利用SRIM程序对不同离子和能量轰击作用下Cu/C和TiAlSiN沉积层中产生的射程、空位深度、声子能量、溅射产额等进行模拟。沉积离子能量在50eV-5000eV范围内，重点分析了50eV-300eV能量范围内的离子作用：C和Cu粒子离子射程在0.3nm-1.5nm范围内，Ti、Al、Si和N的离子射程在0.5nm-2.3nm范围内，离子束沉积过程表现为与表面沉积不同的亚表层形核生长机制，离子能量从50eV增加到300eV时，C和Cu粒子空位数从0.2分别增大到4个和6.5个，空位深度从0.5分别增大到1.2nm和0.8nm；C和Cu粒子产生的声子能量从39.025eV分别增大到200.17eV和217.05eV；原子溅射产额从0.04分别增大到0.692和0.626；Ti、Al、Si、N粒子产生的空位数从0.4分别增大到5.7、5.6、5.5和4.9，空位作用深度从0.2nm分别增大到1.7nm、1.3nm、1.2nm和1.1nm；声子能损从39.605eV分别增加至226.53eV、224.49eV、216.6eV和210.12eV；入射产生的原子溅射产额从0.1分别增加至0.437、0.678、0.65和0.761。

Nanocomposite film is a composite structural material formed by hard nanocrystalline grains embedded in amorphous. It has unique mechanical properties, wear resistance, fatigue resistance and corrosion resistance. Thus, it shows a wide application and prospect in the fields of machinery, marine and aerospace. In this paper, nanocrystalline-Cu/amorphous-C and nanocrystalline-TiAlN/amorphous-Si3N4 composite films were prepared respectively by Filter Cathodic Vacuum Arc Deposition (FCVAD) technology. The effects of different C2H2 and N2 gas flow rates on the composition, structure and properties of Cu/C thin films and TiAlSiN thin films were studied by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, electrochemical workstation and friction and wear tester. The SRIM program was used to simulate the effect of incident ions on the deposited films. The effect of incident ion species and energy on the range, energy loss, damage and sputtering in the deposition layer was explored, and the related mechanism of the incident ion energy in the nanocomposite film deposition process was discussed.

Cu/C films with different compositions and structures were prepared by changing the C2H2 gas flow rate using FCVAD technology. As the C2H2 gas flow rate increased from 10SCCM to 20SCCM, the C content of the films increased from 24% to 47%. The cross-sectional morphology changes from a metallic phase to an indistinct columnar structure. The phase orientations were both Cu (111) and Cu (200), the Cu grain size decreased from 47nm to 23nm. ID/IG ratio decreased from 1.42 to 1.13, and the film residual stress increased from 3.4GPa to 4.8GPa. The friction coefficient decreased from 0.477 to 0.136, and the wear rate decreased from 13.8×10-6mm3/N*m to 0.8×10-6mm3/N*m.

TiAlSiN films with different compositions and structures were prepared by changing N2 gas flow rate using FCVAD technology. With the N2 gas flow rate increased from 20SCCM to 80SCCM, the N content of the films increased from 40.02% to 54.76%, the film structure was more concentrated and uniform; and the surface roughness was 3.4-7.6nm. The hard phase in the TiAlSiN film is mainly fcc-(Ti, Al) N, the orientations are mainly (111), (200), (220) and (311). As the N2 gas flow increases, the average grain size decreases from 26nm to 16nm. At 40SCCM, the mechanical properties of the TiAlSiN films showed peak hardness and binding force of 22.0GPa and 28.04N, the self-corrosion potential of the film in 3.5wt% NaCl solution was 0.2229V, and the self-corrosion current density was 0.89034×10-7A/cm2. The friction coefficient and wear rate in the medium are 0.412 and 0.5×10-6mm3/N*m, the friction coefficient and wear rate in 3.5wt% NaCl solution are 0.28 and 7.5×10-6mm3/N*m. In the corrosive medium, the decrease of the friction coefficient and the increase of the wear rate of the TiAlSiN films are the result of the positive interaction between corrosion and wear, which aggravates the wear of the films.

SRIM program was used to simulate the effect of different energy-carrying ions on the range, energy loss, damage and sputtering yield of Cu/C and TiAlSiN deposited layers under different ion and energy bombardment. The deposition ion energy is in the range of 50eV-5000eV, and focus on the analysis of changes in the energy range of 50eV-300eV. The ion range of C and Cu particles is in the range of 0.3nm-1.5nm, and the ion range of Ti, Al, Si and N is in the range of 0.5nm-2.3nm. Unlike growth mechanism of traditional surface deposition, the ion beam deposition process deposited show as the subsurface nucleation growth mechanism. The number of vacancies in C and Cu particles increases from 0.2 to 4 and 6.5, and the vacancy depth increases from 0.5nm to 1.2 nm and 0.8 nm, respectively. The phonon energy increased from 39.025eV to 200.17eV and 217.05eV; the atomic sputtering yield increased from 0.04 to 0.692 and 0.626, respectively; the number of vacancies generated by Ti, Al, Si, N particles increased from 0.4 to 5.7, 5.6, 5.5, and 4.9, the vacancy depth increased from 0.2 nm to 1.7 nm, 1.3 nm, 1.2 nm, and 1.1 nm, respectively; the phonon energy loss increased from 39.605 eV to 226.53 eV, 224.49 eV, 216.6 eV and 210.12 eV; the atomic sputtering yields increased from 0.1 to 0.437, 0.678, 0.65 and 0.761, respectively.