在大数据时代，数字通信的爆炸性增长迫切需要存储器的发展。由电阻开关器件制备组成的电阻式随机存储器有希望代替 FLASH 存储器成为非易失存储器的关键参与者，在未来的数字技术中发挥重要的作用。本文首先介绍了忆阻这一物理概念及其与电阻开关效应的关系，介绍了电阻开关效应的物理机制，然后介绍了各种材料的电阻开关器件的发展现状,最后讨论了电阻开关器件发展所面临的挑战和未来的前景。 

In the era of big data, the explosive growth of digital communication urgently requires the development of memory. Resistive random access memory composed of resistive switching devices is expected to replace FLASH memory as a key player in non-volatile memory and play an important role in future digital technology. This paper introduces the concept of memristor and its relationship with the resistive switching effect and briefly introduces the physical mechanism of resistive switching effect. Then we introduce the development status of resistive switching devices of various materials, and finally discuss the challenges and future prospects of the development of resistive switching devices.