近年来，为了解决传统能源短缺和环境污染等世界难题，人们开始试图开发利用各种可再生、清洁能源，缓解对传统能源的依赖，降低对环境的破坏程度。太阳能作为一种取之不尽的清洁可再生能源，自然受到人们广泛关注。光伏发电是开发利用太阳能的重要手段之一，如何实现高效地光电转化成为了人们利用太阳能的关键问题。在光伏领域，晶硅电池凭借其原材料来源丰富、低成本、高效率的优势，一直占据着不可替代的地位。一直以来，制约晶硅电池效率的重要因素之一就是光能的大量损失，最大程度的利用光能是提高晶硅电池效率的主要途径。因此，晶硅电池表面制绒技术的发展对于电池效率的提高就显尤为重要。 本文围绕硅表面制绒问题展开研究，受到碱溶液各向异性腐蚀机理的启发，发明了一种利用氢氟酸溶液制备倒金字塔阵列结构的湿法刻蚀法，实现了硅在氢氟酸溶液中的各向异性腐蚀。该方法主要利用含Cu2+的HNO3和HF的混合水溶液作为腐蚀液，室温（25℃）条件下对硅进行腐蚀，可以制备表面光滑、分布均匀的倒金字塔阵列结构，获得最佳反射率仅为6.7%。通过研究溶液成分、反应时间、温度等因素对硅表面形貌的影响，发现调控硝酸溶度，可以在硅表面制备出正金字塔阵列结构。基于硅在碱溶液中各向异性腐蚀机理的研究，从价键角度，详细讨论了在含有Cu2+的HNO3和HF的混合水溶液中倒金字塔阵列和正金字塔阵列的形成机理，进一步揭示硅在氢氟酸溶液中的各向异性腐蚀的奥秘。在掌握了硅在氢氟酸溶液中的各向异性腐蚀的机理之后，我们尝试在氢氟酸的其他体系中实现硅的各向异性腐蚀，首次在FeCl3/HF体系中，通过高温高压水热法成功实现硅在酸溶液中的各向异性腐蚀，在硅表面形成正金字塔结构，并成功解释其形成机理，为进一步探索硅在酸溶液中的各向异性腐蚀提供重要的理论依据。

In recent years, in order to solve the world problems such as energy shortage and environmental pollution, people began to try to exploit and utilize various renewable clean energy to replace traditional energy and reduce the destruction of the environment. As an inexhaustible, clean and renewable energy, solar energy has attracted wide attention. Photovoltaics (PV) is one of the important means to develop and utilize solar energy. How to realize effectively photoelectric conversion has become a key problem. In the photovoltaic field, crystalline silicon solar cells have been occupying an irreplaceable position because of their advantage such as abundant raw materials, low cost and high efficiency. One of the important factors for the efficiency of silicon solar cell is the loss of solar energy, and efficient utilization of solar energy is a vital measure to improve the efficiency of silicon solar cell. Therefore, the development of the texturing technology for crystalline silicon cells is becoming more and more important for the improvement of battery efficiency. In this article, based on the mechanism of anisotropic etching in the alkali solution, a preparation method of inverted pyramid array structure in hydrofluoric acid solution was illμminated. The anisotropic etchants arethe mixture of nitric acid and hydrofluoric acid containing copper ions . At room temperature, uniform inverted pyramid array structure with smooth surface was fabricated on the silicon in the anisotropic etchants. The optimal reflectivity of sample with inverted pyramid array structure is only 6.7%. By studying the influence of solution composition, reaction time, temperature and other factors on the surface morphology of silicon, it is found that upright pyramid array structure can be prepared on the silicon surface by controlling the nitric acid concentration in the anisotropic etchants . Based on the mechanism of silicon in alkali solution , from the perspective of valence bond, the formation mechanisms of the inverted pyramid array and positive pyramid array in the mixture of nitric acid and hydrofluoric acid containing copper ions were discussed in detail. After understanding the mechanisms anisotropic etching in the hydrofluoric acid, we try to find other solution system with hydrofluoric acid to realize anisotropic etching of silicon. For the first time, we fabricated upright pyramids in etchants made of FeCl3 / HF through hydrothermal method under high temperature and high pressure. The formation mechanism of upright pyramids was successfully explained, which provides important basis explore for the anisotropic etching of silicon in acid solution .