电子振颤(Zitterbewegung)这一概念最早由Schrödinger在研究相对论性量子力学中提出。由Dirac方程出发，真空中“直线运动”的电子会在垂直群速度方向上做振颤运动。这种非直觉现象的产生来源于正负能态的耦合。但由于两能态间的巨大能隙，造成这种振颤实际观测的困难。由于振颤来自于不同能态间的耦合，各种材料中的自旋轨道耦合效应都会使电子的不同能量本征态耦合起来，并且这些材料中的耦合强度比真空中强很多，这为观测到这种振颤提供了可能性。 本文首先简单的回顾真空中的振颤现象，之后计算了III-V闪锌矿半导体量子阱、单、双层Graphene中的Zitterbewegung，并且讨论其振幅相关因素以及随时间衰减的性质。

The notion of Zitterbewegung (ZB) was first introduced by Schrödinger in his seminal work in which he realized a single electron moving in vacuum will not take the straight trajectory while doing trembling motion according to Dirac equation. The phenomenon ZB is due to an interference of wave functions corresponding to positive and negative eigenenergies of the initial Hamiltonian. But the huge energy gaps between the two energy states make it impossible to observable this effect. However, much stronger spin-orbits coupling in many realistic materials and structures can also lead to greater ZB and make it possible to observe this phenomenon. In this paper, we first take a brief review of ZB in vacuum for a single electron, and then discuss ZB effect in III–V semiconductor quantum wells; mono and bi layer Graphene, focusing on the amplitude, frequency and the attenuation of ZB in each system.