弱光探测器在医学及空间测探等方面都有着极其重要的用途，硅光电倍增器(SiPM)作为弱光探测器有着优异的性能。北京师范大学新器件实验室研制成功的外延电阻淬灭SiPM具有良好的单光子探测性能，并且工艺简单，恢复时间快和动态范围大。在实验室已有的外延电阻淬灭SiPM研究基础上，本论文的工作旨在提高外延电阻淬灭SiPM在蓝紫光区（360 nm-420 nm）的探测效率。首先针对器件进行了设计前的模拟软件的调试工作，介绍了ISE-TCAD软件的模拟方法，并根据自己的经验，总结出工艺模拟和迭代收敛中问题的解决办法，为之后的器件模拟做好了铺垫。对蓝紫光增强SiPM的设计进行了详细的论述，从模拟得到了理想的器件结构：采用p-on-n的结构，结深0.5μm左右，电场纵向宽度大，边缘电场小。理论上得到了具有优异性能的SiPM，预期可以有效提高器件在蓝紫光区的探测效率。在器件研制中采用了p+/p/n+的纵向结构，并采用深槽隔离的方法进行单元间隔离。设计了两种深槽隔离结构的器件：V型槽结构SiPM和垂直槽结构SiPM，并分别对这两种器件进行了设计优化，重点从模拟方面对两种器件工作的可行性进行了论证，从中得到了诸如离子注入、退火扩散和电学结果均匀性等问题的解决办法。最后，实验室实际制作出了这两种蓝紫光增强SiPM器件，测量结果显示具有较好的I-V曲线。最终选择垂直槽结构SiPM作为未来的研究方向，测量结果显示其有一定的光响应，说明取得了初步成功。

Weak light detector has very important use in medicine, space exploration field, etc. As a kind of weak light detector, Silicon Photon Multiplier(SiPM) possesses excellent performance. SiPM with epitaxial quenching resistor which was developed at Novel Device Laboratory (NDL), Beijing Normal University, has a strong ability of single photon detection and other features like low cost, high micro cell density, fast recovery time and large dynamic range. Aimed at improving the photo detection efficiency(PDE) of epitaxial quenching resistor SiPM in the blue violet region(360 nm-420 nm), the thesis presents a kind of deep trench isolation SiPM. The structure of the device is optimized through the simulation, and the preliminary experimental results have been obtained.Preparing to design the device, the thesis presents how to use ISE-TCAD and some related issues, which paves the way for the simulation of the device.Then the design of the blue -violet enhanced SiPM are discussed in detail, studied deeply from the aspects of theory. Ideal device structure is obtained: the electron triggering avalanche , junction depth about 0.5 um, wide longitudinal electric field, small edge electric field. The SiPM with Excellent performance is obtained theoretically, which can effectively improve the photon detection efficiency in the blue violet region. Two kinds of deep trench isolation SiPM are designed: V type groove SiPM and vertical groove SiPM. And we carried on the exploration on them theoretically, obtaining solutions of ion implantation, annealing and the electrical distribution uniformity and so on, after the simulation of the two kinds of devices. Finally, two kinds of blue-violet enhanced SiPM devices are produced, and the measurement results show that some of I-V curves are right . We finally choose the vertical groove SiPM as the next research direction, which has a certain light response, showing that initial success has been achieved.