硅纳米线是一种新型的一维半导体光电材料。具有特殊的光致发光、电子输运等性能，可以实现在纳米传感器等多种纳米电子器件及合成其它纳米材料的模板方面的应用。本文系统地介绍了用化学腐蚀方法制备硅纳米线的方法和利用化学腐蚀方法来改善硅纳米线的光致发光的性能。通过一种化学腐蚀的方法来制备硅纳米线，并且用化学腐蚀的方法来修饰硅纳米线，通过这种方法来加强硅纳米线的光致发光性能，从而使得硅纳米线具有良好的光致发光性能。

Silicon nanowire is a new kind of one-dimensional semiconductor optoelectronic material. It has special photoluminescence, electron transportation capability, it can be achieved in nanotechnology sensors, and other nano-electronic devices and other nano-materials of the application templates. This article systematically introduced improves the silicon nanowires with chemistry etching method preparation silicon nanowires method and using chemistry etching method the photoluminescence performance。The method corrodes which through one chemistry prepares the silicon nanowires, and the method which corrodes with chemistry decorates the silicon nanowires, strengthens the silicon nanowires through this method the photoluminescence performance, thus enables the silicon Nanometer line to have the good photoluminescence performance.