i-线光刻胶在半导体产业中具有较广泛的应用。其中环化橡胶-双叠氮体系有好的耐湿法蚀刻性，成本低廉，目前仍被用于一些半导体加工中。使用二甲苯类有机溶剂显影是其最大的缺点，本文尝试以聚乙烯醇为原料，制备可以在稀碱水中显影的新型双叠氮负性光刻胶。另外，我们从马来海松酸酐出发，制备了两种酯化物，尝试把它们和光产酸剂一起组成i-线光刻胶。

I-line photoresists are widly applied in semiconductor industry. Among them, the cyclized rubber-bisazide system has good wet etching resistance and low cost, and is still used in semiconductor processing. Whereas this type of photoresist needs to be developed with organic solvents such as xylene, which is its biggest disadvantage. In this paper, polyvinyl alcohol was used as a raw material to prepare a new type of bisazide negative photoresist that can be developed in dilute aqueous base. In addition, based on maleopimaric anhydride, we prepared two esters and tried to combine them with photoacid generator to form i-line photoresist.