本工作用实验室加速器提供的质子束对国产空间GaInP/GaAs/Ge三结太阳电池进行低能质子辐照效应研究。通过对辐照前后太阳电池样品的I-V特性、光谱响应和计算机SRIM 2006程序模拟分析，以及与GaAs/Ge单结太阳电池低能质子辐照效应的对比，讨论了1 1010～1 1013 cm-2注量范围的0.28、0.62和2.80 MeV低能质子对国产GaInP/GaAs/Ge三结太阳电池的影响。研究结果表明：在相同注量情况下，随着辐照质子能量的增加，GaInP/GaAs/Ge三结太阳电池性能参数Isc、Voc和Pmax的衰降幅度减小。质子能量相同时，随辐照注量的增加，该种电池的电性能参数衰降幅度增大，但Isc、Voc和Pmax的衰降幅度不同：Pmax衰降幅度最大，Isc次之，Voc最小。整个电池光谱响应随辐照质子能量、注量的变化规律与电性能参数一致，但在相同辐照条件下，GaInP顶电池的光谱响应衰降比GaAs中间电池小，说明GaInP电池的抗辐射性能强于GaAs电池。SRIM 2006模拟计算表明，随着质子能量的增加，布拉格损伤峰与电池p-n结距离增大，质子在电池有源区中所造成的辐射损伤减少，对电池性能的影响也相应地减小，这进一步在微观上解释了电池性能变化所出现的规律。用GaAs/Ge单结太阳电池进行对比实验发现，GaInP/GaAs/Ge三结太阳电池的抗辐射性能与GaAs/Ge单结太阳电池相近，说明GaInP/GaAs/Ge三结太阳电池受辐照后性能的衰降主要由中间GaAs电池所引起。这些研究结果，为国产GaInP/GaAs/Ge三结太阳电池的空间应用提供了辐射实验数据和抗辐射评估依据。

Low-energy proton irradiation effects on home made GaInP/GaAs/Ge triple-junction(3J) solar cells were studied. The protons used were from a 2 1.7 MV accelerator in laboratory with energy of 0.28, 0.62 and 2.80 MeV and fluencies from 1 1010 to 11013 cm-2. I-V characteristics and spectral response were measured before and after each irradiation, and SRIM 2006 was utilized to help analyze the results theoretically. In order to make a more detailed research, GaAs/Ge single-junction (SJ) solar cell is used for comparison. The results indicate that the degradation of short circuit current Isc, open circuit voltage Voc and maximum power output Pmax of GaInP/GaAs/Ge 3J solar cells decrease as the irradiation energy of proton increases. And the degradation of these parameters increase as proton fluence increases, among which Pmax decreases the most while Voc the least. At the same irradiation condition, the spectral response of GaInP top cell decreases less than that of GaAs middle cell, which indicates that the irradiation resistance of GaInP top cell is better than that of GaAs middle cell. SRIM 2006 simulation shows that, as proton energy increases, the Bragg damage peaks become further from the active region of solar cells, and the damage in the active region is less severe, so that the irradiation effect to the cells is smaller. The irradiation resistance of GaInP/GaAs/Ge 3J solar cells is similar to that of GaAs/Ge SJ solar cells, which indicates that the degradation of 3J cells is mainly controlled by GaAs middle cell.These results are helpful to the space applications of GaInP/GaAs/Ge 3J solar cells.