随着固体器件高水平发展，光刻工艺的微细加工技术在各种半导体和集成电路的制造中显得更加重要。首先被应用于半导体工业的光刻胶是属于负型，它是由印刷工业转而应用于电子工业，但受限于分辨率无法提高，无法符合电子器件细微化之要求。因此本实验制备了四种负性光致抗蚀剂，其中有两种是可使用的新型负性胶：（1）用甲基丙烯酸叔丁酯（与酚羟基比例为3：7，树脂与交联剂质量比为8：1）、小分子产酸剂和PGMEA作为溶剂配制的负性胶，经验证这种负性胶可作为一种光刻工艺上性质优良的新型负性胶。（2）树脂组成不变（树脂与交联剂质量比为8：1.5），用小分子产酸剂和PGMEA作为溶剂配制的负性胶，经验证这种负性胶也可作为一种光刻工艺上性质优良的新型负性胶。

With the development of high-level solid devices, lithography process of micro-processing technology in a variety of semiconductor and integrated circuit manufacturing is even more important. The photoresist, which is first applied to the semiconductor industry, belongs to the negative type, which is used by the printing industry to be applied to the electronics industry, but is limited by the fact that the resolution can’t be improved and can’t meet the requirements of electronic device miniaturization. Therefore, four negative photoresists were prepared in this experiment，two of which are usable: (1) A negative gel prepared with t-butyl methacrylate (3: 7 with phenolic hydroxyl group ratio，the mass ratio of resin to crosslinking agent is 8: 1), small molecule acid generator and PGMEA as solvent. This negative photoresists was verified as a new type of negative photoresists with excellent properties. (2) With resin composition unchanged, (the mass ratio of resin to crosslinking agent is 8: 1.5) small molecule acid generator and PGMEA as solvent. It has been proved that this negative glue can also be used as a new type of negative glue with excellent properties in lithography process.