硅漂移探测器（SDD）是一种广泛应用于X射线探测，实验核物理和天体物理等领域的半导体探测器。在十二五空间探测规划中，国家希望建立大型空间实验室，需要建造5m2X射线望远镜探测阵列，如果采用Si-PIN结构探测器，由于其结电容较大，探测器噪声较高的缺陷，难以达到高信噪比的要求，所以硅漂移探测器以其电容小，能量分辨率高等特点成为大规模X射线探测器阵列的首选。但目前，大量硅漂移探测器都依赖国外进口，成本相对较高，特别是对研制由硅漂移探测器单元组成的5m2大的X射线望远镜阵列，大批量购置就更加困难，针对国内在该领域研究较少的现状，我们期望通过我们的研究工作，以双面并行工艺为基础，为低成本，高效能地自主研发硅漂移探测器，摆脱硅漂移探测器需要从国外进口的局面进行有益的尝试。在研制硅漂移探测器之前，通过对PN结单项工艺的优化研究，总结并制定出了一整套针对我们实验室的优化工艺条件，为研制硅漂移探测器打下了坚实的基础。在降低硅漂移探测器研制难度、提高探测器制作效率方面，我们采用了双面并行平面工艺，研制出的探测器在正常工作偏压下的阳极漏电流达到0.28nA，并观察到了明显的信号漂移现象，通过对有源区量子效率的测量，发现在整个入射窗口区域，量子效率均可稳定在60%，这说明我们器件在整个入射窗口区域内都有很好的信号响应。另外对阳极漏电流和悬空电位进行了测量，发现阳极漏电流随最外漂移环偏压的增大而增大，而悬空电位只与第一漂移环偏压大小有关而与最外漂移环偏压大小无关，并对漏电流，阳极电位与各偏压之间的关系进行了理论解释。关键词：硅漂移探测器，双面并行工艺，光响应，漏电流，有源区，收集阳极

SDD (Silicon Drift Detector) is a kind of semiconductor detector which has been widely applied, in X-Ray detection, the experiment of nuclear physics, astrophysics, and medical-treatment areas。In the project of the 12th five year plan, we need to build a large-scale space lab, and highly effective array of X-Ray telescope is necessary. If we adopt traditional Si-PIN detector, as its high capacitance and noise limitation, it’s hard to satisfy the requirement of the experiment. So silicon drift detector, due to its own superiorities in energy resolution and noise control, has become a nice substitute of Si-PIN especially when the detector array is needed. But at present, the use of SDD has been totally relied on importation, so the cost is much higher especially we need to equip a 5m2 radio telescope. So, according to the difficulty we faced now, we expect that, through our research, we can make it true to produce high performance SDD all by our own by lowing cost base on our process.Before we run the research, we have finished the optimization of the unilateral process according to our lab by fabricating PN junction which is the basement of SDD.In the aspect of reducing cost of fabrication, we have a valuable try to develop a new, more efficient technology to simplify the whole fabrication process by parallel double-side technology based on traditional silicon plane technology. The leakage current of the anode, in experimental condition, has achieved 0.3nA, and observed obvious phenomenon of excursion. By the test of the quantum efficiency, found it has signal effect in the whole active area, and the quantum efficiency stabilize in 60% without attenuation.To explain the principle of the increase of potential of collecting anode, and conclude that the potential just determined by the first drift ring, and changed obviously when the substrate has been depleted completely, but not changed with the 22t drift ring’s voltage increase.KEY WORDS: Silicon drift detector, parallel double-side technology ,light respond, leakage current, active area，collecting anode.