本文以注量为 5×10¹⁴cm^-2，能量为 1.0 MeV电子辐射 GaInP/GaAs/Ge三结太阳电池为研究对象，对其进行了温度及功率变化光致发光谱测量，研究了电子辐射 GaInP 顶电池、GaAs 中间电池以及 Ge 底电池的热淬灭效应与反淬灭效应，并讨论了当温度从 10 K 升高至 300 K，各结子电池光生载流子辐射复合与非辐射复合的竞争机制。主要包括以下内容：
       （1）当温度从 10 K 升高至 300 K，测量了电子辐射 GaInP 顶电池、GaAs 中间电池以及 Ge 底电池温度变化 PL 光谱，鉴别出 GaInP 顶电池(E_v + 0.55 eV)、GaAs 中间电池（E_c -0.96 eV）以及 Ge 底电池（E_C1 = 0.37 eV和 E_C2 = 0.12 eV）的非辐射复合中心。
        （2）分析了电子辐射 GaInP 顶电池和 Ge 底电池温度变化 PL 光谱，鉴别出 GaInP 顶电池_{（????1 = 0.05???? 和 ????2 = 0.35????）的中间态能级。 （3）测量了电子辐射 GaInP 顶电池、GaAs 中间电池以及 Ge 底电池 的功率变化 PL 光谱，发现随着非辐射复合中心被热激活，Z 值从 1 逐渐 增大至 2，导致 PL 强度与激发功率从正比关系逐渐变成平方函数关系， 光生载流子非辐射复合方式增多，非辐射复合中心是引起三结太阳电池发生热淬灭效应的核心因素；随着中间态能级的出现，Z 值随温度升高减 小，光生载流子辐射复合方式增多，是 GaInP 顶电池和 Ge 底电池出现反淬灭效应的原因。} 

         Temperature and excitation power dependent photoluminescence measurements were presented for the electron-irradiated(1.0 MeV electron beams with a fluence of 5×10¹⁴cm^-2)GaInP/GaAs/Ge triple-junction solar cells. The thermal quenching effect and abnormal thermal quenching effect of electron-irradiated GaInP top-cell, GaAs middle-cell and Ge bottom-cell were investigated. When the temperature goes from 10 K to 300 K, the competing mechanism of photo-generated carriers that between radiative recombination and non-radiative recombination in each sub-cell were obtained. The main research work includes:

        (1)When the temperature goes from 10 K to 300 K, the temperature dependent photoluminescence spectra of GaInP top-cell, GaAs middle-cell and Ge bottom-cell were presented respectively. The non-radiative recombination centers in GaInP top-cell(E_v + 0.55 eV), GaAs middle-cell(E_c -0.96 eV)and Ge bottom-cell(E_C1 = 0.37 eV和 E_C2 = 0.12 eV)were identified.

        (2)The temperature dependent photoluminescence spectra of GaInP top- cell and Ge bottom-cell were analyzed respectively. The intermediate states in GaInP top-cell(????1 = 0.05???? 和 ????2 = 0.35????)were identified. (3)The excitation power dependent photoluminescence spectra of GaInP top-cell, GaAs middle-cell and Ge bottom-cell were obtained, respectively. It was found that the Z-value increased from 1 to 2 with the activation of the non-radiative recombination center, which caused the relationship between  intensity and excitation power gradually changed from linear to quadratic dependence. As a result, the proportion of non-radiative recombination in recombination processes of photo-generated carriers increased, so the non-radiative recombination center is the core factor that causes the thermal quenching effect of the triple-junction solar cells. With the appearance of intermediate states, the Z-value decreased with the increase of temperature, and the proportion of radiative recombination in recombination processes of photo-generated carriers increased, which is the reason for the abnormal thermal quenching effect of GaInP top-cell and Ge bottom-cell.