光敏聚酰亚胺（Photosensitive Polyimide，PSPI）材料是微电子制作领域一种非常重要的光刻胶材料，目前其国产化正处于起步阶段。

本文根据现有文献及本课题组以往的研究经验，分别利用两种不同的二胺与二酐反应，制备分子量较小的聚酰亚胺（PI），再与重氮萘醌磺酰氯（DNQ）进行反应引入感光性基团得到光敏聚酰亚胺材料。将制得的光敏聚酰亚胺溶于二甲基甲酰胺溶剂中，按照需要可再加部分感光剂，配制得到正性光敏聚酰亚胺光刻胶。进行曝光实验并根据其成像效果选择出比较好的光敏聚酰亚胺光刻胶。

制备了几种不同的光敏聚酰亚胺材料，其中一种光刻胶在成像测试中得到了较好的表现，性能基本达到预期要求，完成了初期设定的实验目标。

Photosensitive polyimide (PSPI) material is a kind of very important photoresist material in the field of microelectronics. The domesticization of the key material is still in the beginning stage.

In this paper, on the basis of the literature and the previous research of our group, polyimide (PI) compounds with small molecular weights were prepared by using two kinds of diamines, and then photosensitive polyimides obtained by reacting the PI compounds with 2,1,4-diazonaphthoquinone sulfonyl chloride (DNQ) to introduce photosensitive groups. Thus prepared PSPI compounds were dissolved in N,N-dimethylformamide (DMF) solvent to give the PSPI photoresists, a little more photoactive compound(PAC) can be added if necessary. Exposure experiments were made and good PSPI photoresists can be picked out according to the imaging performance.

Several PSPI photoresists were prepared, one of which acquired good performance in the photolithographic experiments and basically met the expected requirements. The target of these experiments is achieved.