本工作利用半导体器件模拟软件ISE-TCAD的重要模块DIOS、MDRAW和DESSIS进行硅光电倍增探测器（SiPM）和正面入射硅雪崩漂移探测器（ADD）的模拟优化与设计，确定工艺流程参数，分析器件的电学特性。硅光电倍增探测器（SiPM）具有替代光电倍增管的潜力，拥有低电压下高增益、时间响应快，单光子计数能力等优点，使其在高能物理实验，空间物理，正电子断层扫描（PET）以及量子通信等方面有着重要应用。缺点是探测效率（一般20-40%）和动态范围（一般102-104/mm2）较低，且二者不能兼顾。针对这一问题，本论文工作对SiPM的器件结构、工艺流程以及淬灭电阻的制备进行了模拟和实验研究。主要研究内容和成果包括：（1） 改进器件结构，希望制备出探测效率>40％，同时动态范围达到104/mm2的SiPM；（2） 为降低边缘效应，提高SiPM的几何因子，模拟设计了两种不同的保护环结构，有效地减小了pn结边缘电场；（3） 模拟研究了pn结的结面积与其反向击穿电压的关系，并与实验结果进行对比，发现击穿电压随着注入窗口尺寸的增加而减小；（4） 对电子束蒸发SiC透明导电薄膜充当SiPM的淬灭电阻进行了研究。得到富C的非晶态薄膜，电阻率偏低，并且透光率较差，说明电子束蒸发并不适合制备高温下升华分解的材料薄膜。为了提高SiPM的探测效率，2001年美国Northridge的实验室提出了将硅漂移探测器和雪崩结构结合到一起的漂移雪崩探测器的概念，预期具有输出电容小，探测效率高（>80%）等优点。2004年德国马普研究所的研究人员对该结构进行了改进，提出新型的漂移雪崩探测器（ADD）概念。但由于很高的暗计数率和光学串话，至今只有模拟和单元测试结构结果的报道。本论文工作利用ISE-TCAD对一种新的正面入射雪崩漂移探测器的器件结构和电学特性进行了模拟研究。结果显示，在Pwell内形成能谷，为空穴漂移提供了通道，而空穴电流分布图则显示空穴在漂移电场的作用下沿着能谷通过高场区，引发雪崩并被收集电极收集。即这种新的雪崩漂移探测器概念被模拟证实是可行的。

In order to analyze the property of devices and optimize the process, DIOS, MDRAW and DESSIS, which are important modules of ISE-TCAD tools, are used to simulate the structure and electrical performance of Silicon Photomultiplier（SiPM）and Avalanche Drift Detector with Front Irradiation Entrance (ADD).Silicon Photomultiplier（SiPM）has been developed in recent years and promise to be an alternative to photomultiplier tubes (PMT). SiPM has many advantages, such as high gain at low bias voltage, very fast timing properties and single photon counting capability, which make it useful in high-energy physics, astronomy, positron emission tomography (PET), and quantum communications. Disadvantages are high dark count rate, low detection efficiency (~20%-40%) and small dynamic range (102-104/mm2) which are even hardly compatible. To solve these problems, our laboratory has proposed an innovated structure, the simulation and measurements of the innovated device structure are carried out and the results are compared. On the other hand, SiC film as quenching resistor is also investigated. In this thesis, the primary results include four parts:(1) The structure of SiPM is innovated, and its detection efficiency is supposed to be larger than 40%, while its dynamic range is up to 104/mm2;(2) Comparison of two types of guarding ring structure is made, they are designed to reduce the edge effect and increase geometric factor;(3) The break-down voltages of G-APD cells with different implanting window sizes are simulated and compared with measurment. It is found that the break down voltage decreases with increasing implanting window size;(4) The SiC film, deposited by electron beam evaporation and used to form quenching resistor is invesitgated. The measurement results indicate that it is amorphous state and has more C elements. Moreover its resistivity is a little bit small, and the transmittance is low. Therefore, electron beam evaporation is not the optimal method to prepare SiC, the film of material decomposed in high temperature.In 2001 the concept of Avalanching Silicon Drift Photodetector (A+SDP) was proposed in Northridge to enhance detection efficiency, it combines the drift diode with an avalanche structure placed on the opposite of the irradiation entrance window. The A+SDP was supposed to have low capacitance, large dynamic range, and high detection efficiency (>80%). In 2004 a simplified structure of A+SDP which is called ADD was proposed by Max-Planck-Institute in Germany. However high dark counts by thermal carriers and serious crosstalk, leading only the reports of simulation and test structure. In this thesis, an improved detector concept of ADD whose radiation entrance window is on the front side of the device is presented and simulated. The results indicate that a potential valley is achieved in P-well region, and it provides a channel for holes drifting. From the holes current distribution obtained by simulation, it showst that holes drift through the high electric field region along the potential valley under the force of electric field, trigger an avalanche, and are collected by collector. Thus, the fesibility of this kind of novel ADD concept is verified.