由于结构三维受限，半导体量子点显示出了诸多特异的光电性质。理论预计量子点光电器件将具有传统光电子器件所不具有的更优越的性能，吸引着科技人员的目光并得到了较快的发展。而量子点材料性质的好坏直接决定着器件的性能，对材料的光致发光谱分析已成为研究低微结构材料的有力工具，广泛应用于薄膜表面界面的分析和研究工作。 目前可用于光纤通信的长波长(1.3m、1.55m)量子点激光器吸引了很多人去研究。采用应变自组装的GaAs基InAs量子点激光器可以获得 以及更长的光输出被认为是最有前途的通信光源。因此，该材料的生长以及光学测试成了最重要的环节。 本论文系统地介绍了量子点的能级结构特征，分子束外延（MBE）的工作原理，以及材料光致发光谱（PL谱）的测量装置及形成基本原理。并通过MBE实验研究了InAs/GaAs1.3 量子点材料的生长条件及过程，并利用PL谱等性质对量子点进行了分析。

Semiconductor quantum dots (QDs) show us the unique optical and electronic properties that results from three-dimensional (3D) quantum confinement. Devices based on it are under development and attracting extensive research interest to utilize its better performance than traditional ones. The quality of QD material directly determine the performance of the electronic devices. The photoluminescence (PL) emission gives us a convenient way to research the structure of low dimensional material and is vastly applied to the surface analysis of pellicle. Recently, the long wavelength(1.3;1.5μm) laser light attracts more interest because of its application potential to optical fiber. As a result, the InAs–GaAs Quantum-Dot Lasers is considered as one of the most ideal corresponding light sources. So the growth of high quality InAs quantum dots (QDs) on a GaAs (1 0 0) substrate and optical properties measuring still remains an interesting question. In this thesis, we demonstrate in details the character of QDs’ energy states, the working principle of molecular beam epitaxy (MBE), the rationale of PL emission and experiment equipment. Through experiment, we grow several epitaxial layers by MBE under different conditions. Meanwhile, wo also do many experimental and theoretical studies on the behaviors of QDs on high index GaAs surfaces, the choice of the optimum indexed substrate for QD ordering, size uniformity, and importantly, the corresponding optical properties of the QDs.