本文围绕电子型铜氧化物超导体La2?xCexCuO4（LCC0） 展开工作， 我们利用脉冲激 光沉积制备高质量的单组份LCCO薄膜和组合 LCCO 薄膜随后对样品进行结构表征和电输运 性质研究。全文结构如下： 1.铜氧化物超导体的研究概况，重点介绍电子型铜氧化物超导体，主要内容包括电 子型铜氧化物超导体与空穴型铜氧化物超导体的差异和选题的意义。 2.主要涉及到的实验设备和技术，包括脉冲激光沉积、 X 射线衍射、综合物性测量和 高通量等技术。 3. LCCO超导薄膜包括单组分最佳掺杂薄膜和组合薄膜的制备与表征。我们利用脉冲 激光沉积生长了最佳掺杂附近的 LCCO 超导薄膜随后对其进行物性表征。 XRD 结果显示单 组分 LCCO 薄膜成分为纯 001 相，不存在杂相。 对其电阻行为进行了测量发现其在低温下 有非费米液体行为，但与空穴型铜氧化物超导体表现出的有所不同。我们也制备了高质 量的 LCCO 组合薄膜， XRD 结果显示其各组分均为纯 001 相。 我们用这份样品测量了从最 佳掺杂到过掺杂的电阻行为， 相较于常规的单组分制备-表征的手段，组合薄膜可以实现 对多种组分的薄膜进行一次性表征，这证明了高通量技术的优越性。 4.在不同温度下对最佳掺杂的 LCCO 样品进行了霍尔效应测量，发现在一定温度下， 样品的霍尔电阻随着磁场的变化发生了由负到正的转变，同样在相同磁场下，样品的霍 尔电阻随着温度的变化其正负号也会不同。 我们从双能带模型出发，对这一现象做出定 性的解释。 5.总结和展望。

This thesis mainly focuses on the preparation and physical properties of electron-doped cuprate superconductors La2?xCexCuO4(LCCO) thin films. The main contents are as follows. chapter ?： The study of cuprate superconductors especially electron-doped cuprate superconductors, including the basic properties of electron-doped cuprate superconductors and its differences between hole-doped cuprate,.Then we describe the main purpose of our work chapter Ⅱ：The experimental instruments needed for our work, including pulsed laser deposition (PLD), x-ray diffraction (XRD) and Physical Property Measurement System (PPMS) and high throughput technology。 chapter Ⅲ: The preparation and characterization of LCCO superconducting thin films including single-component optimal doped thin films and composite thin films. We use pulsed laser deposition to prepare optimal doped LCCO thin films. Then we study its physical properties. The XRD results show that the singlecomponent LCCO thin films are pure 001 phase and there is no other phase. Its resistance behavior was measured and found to have non-Fermi liquid behavior at low temperatures, but different from the hole-type copper oxide superconductors. We also prepared a high-quality LCCO composite film. XRD results showed that itscomponents were all pure 001 phase. We used this sample to measure the resistance behavior from the optimal doping to over doping, and demonstrates the superiority of high-throughput technology. chapter Ⅳ: the Hall effect test under different temperatures was performed on the optimal doped LCCO samples. It was found that at a certain temperature, the Hall resistance of the sample changed from negative to positive with the change of the magnetic field. . At the same time, the change of the Hall resistance of the sample with the change of the temperature also proves the transition of the carrier type, indicating that there is a two-bands effect in the LCCO superconductor near the optimum doping. Based on this result, we proceed from the two-bands model and make a qualitative explanation of the phenomenon. Chapter Ⅴ:we summarize our work and make an outlook