本文从朗道所建立的关于畴壁结构的唯象理论出发研究了畴壁中局域磁矩的微结构，以及电子和静止畴壁之间的角动量交换对畴壁结构的影响，从而得到了当电子绝热穿过畴壁时，会改变畴壁的微结构的结论。 同时还基于s-d模型，研究了做进动的畴壁对传导电子的影响，首先介绍了Berger关于该机制的唯象理论，即传导电子会感受到进动畴壁所施加的电动势；然后从绝热相出发诱导出进动畴壁作用在传导电子上的规范场，并指出这种规范场类似于电磁场，而且作用到电子上的形式非常类似于洛仑兹力，并且该规范场作用的结果是和Berger的结论是一致的；最后用一个唯象理论来说明该机制中电动势的来源于电子和畴壁之间角动量和能量的交换。

In this paper, the local spin texture of domain wall is studied using Landau’s phenomenological theory about domain wall, represent that when an electron move adiabatically across the wall , the local spin texture will change for the exchanging of angular momentum between local spin with moving electron. Based on s-d model, the interaction of processing domain with conducting electron is also studied. Berger’s phenomenological theory is introduced first to show that a electron motive force is exist in this dynamic system; then induce a gauge field from Berry’s phase and indicate that this gauge field is like electromagnetic field and act on the electron just the same form as Lorenz’s force, this gauge field is consistent with Berger’s result; at last we illustrate that the electron motive force comes from the conservation law of both angular momentum and energy in this system.