本研究所建立的 EUV Extreme Ultraviolet,极紫外光，以下简称 EUV光刻模型是在 DUV Deep Ultraviolet，深紫外光，以下简称 DUV 矢量光刻模型的基础上，将 EUV 光刻中掩模的 6 主入射角（ chief ray angleof incident CRA ）看作 DUV 光刻模型的物方远心误差（像方依旧保持远心），以此修正 DUV 光刻模型所得到的。在得到新模型的理论公式后，通过 MATLAB 编程，在保持掩模设置不变的条件下（ 1:1 水平线条的理想薄掩模），设置相干照明和部分相干照明共 4 组实验，将所得结果与国外光刻仿真软件 Sentaurus Lithography(EUV 版本 运行结果进行比对，通过定性和定量分析，发现相干照明条件下二者空间像相对强度的差值的均方根均在 10 4 数量级，而在部分相干照明条件下二者空间像相对强度的差值的均方根在10 3 数量级，这证明所建立的 EUV 新型光刻模型与仿真软件基本一致，其框架和逻辑是正确的。

The model established in this research is based on the DUV vector lithography model, by treating the 6-degree chief ray angle of incident in EUV lithography as the object-space telecentric error of the DUV lithography model ( image-space telecentricity still holds). The EUV model is then implemented by MATLAB. 4 sets of controlled experiments are undertaken, and the results are compared with the commercial software Sentaurus Lithography(SLitho). Through qualitative and quantitative analysis, we got the result summarized as follow: the standard deviation of the differences between the aerial images calculated by MATLAB code and the SLitho are 10-4 under coherent illumination setting;the standard deviation of the differences between the aerial images calculated by MATLAB code and the SLitho are 10-3 under partial coherent illumination setting. These results prove that the new EUV lithography model is nearly identical to the simulation software under the setting used in the experiments, and the framework and logic of our EUV lithographic model are correct.