Ⅲ-Ⅴ族半导体纳米线具有独特的电学性质，在场效应管等纳米电子器件中有重要的应用前景。本论文首先综述了Ⅲ-Ⅴ族半导体纳米线的晶体结构特征，概述了Ⅲ-Ⅴ族半导体纳米线的电学性质，以及有关InAs和InSb纳米线结构及物性的研究现状，并简单介绍了基于InAs、InSb纳米线的器件研究与应用。 本工作以研究InAs、InSb纳米线的结构与物性为目的，结合透射电镜表征和原位测量两种技术，完成了对InAs和InSb纳米线进行表征和单根纳米线的电学性质测量的部分工作。 利用透射电镜对InAs、InSb纳米线的表面形貌、晶体结构进行了分析。结果表明同一批生长的InAs纳米线表面形貌差异很大，而且纳米线的晶体结构中有大量缺陷存在。InSb纳米线的相较好，缺陷较少。 利用透射电镜下的原位测量技术测量了InAs、InSb纳米线的电学性质，发现典型的I-V曲线是导电性不太好的非线性I-V曲线。利用拟合软件PKUMSM对非线性I-V曲线进行拟合和参数提取，得到纳米线的电阻和载流子迁移率。结果发现纳米线的电学性质根与根之间差异很大，可能与单根纳米线的结构和内部缺陷等有关。

Ⅲ-Ⅴ semiconductor nanowires show outstanding promise for field-effect transistors(FET) applications because of their unique electrical properties. In this paper, we demonstrate the crystal structural properties and electrical properties of Ⅲ-Ⅴ semiconductor nanowires, and give a brief introduction to the recent research results on structural and electrical properties and applications of InAs and InSb nanowires. Our research begins with the view of exploring the correlation between structural and electrical properties. We characterize InAs and InSb nanowires utilizing transmission electron microscope(TEM), and measure I-V curves of free-standing InAs and InSb nanowires using in-situ measurement. By using TEM, InAs and InSb nanowires’ surface morphology, crystal structure is analyzed. The results show that within a group of InAs nanowires, surface morphology difference greatly, and there is a tremendous amount of stacking faults in the crystalline structure. However, InSb nanowires have better crystal structure and fewer defects. By utilizing in-situ measurement technique in TEM, the electrical properties of free-standing InAs and InSb nanowires are measured, and found a typical nonlinear I-V curve with not perfect conductivity. Utilizing the software PKUMSM, we fit for nonlinear I-V curve and extract transport parameters, such as nanowires’ resistance and carrier mobility. The results show that the electrical properties of different nanowires vary differently which can be result from difference of structure and internal defects of single nanowires and so on.