作为一种典型的过渡金属硫族化合物材料，二硒化钼（MoSe₂）因其独特的结构和性质而受到越来越多的关注，并且在电学、光学等众多领域呈现出极大的应用潜力。特别是单层MoSe₂，是具有直接带隙的半导体（带隙宽度约为1.55eV），可用于场效应晶体管及光电器件中。但是实现MoSe₂的实际应用，首先需制备出大面积高质量的MoSe₂晶体，因此如何获得定向生长的单层MoSe₂晶体一直是一个较大的挑战。本文正是基于以上的研究兴趣而展开，通过调研大量的已有的科研文献，对利用化学气相沉积法（CVD）在SiO₂/Si衬底表面制备层数、尺寸和晶体质量可控的MoSe₂进行总结，希望为从事这方面的研究者提供较为有价值的参考资料。本论文内容包括：

1）          简单介绍MoSe₂的结构以及各种制备方法；

2）          分析总结在CVD生长过程中各种因素，得到六个在CVD生长过程中对MoSe₂的形状、尺寸及层数有重要影响的因素，分别为前驱体的选择和比例、衬底与前驱体的间距和摆放方式、载气流量和成分比例、反应温度、反应时间以及NaCl的辅助作用。

As a typical transition metal chalcogenide material, MoSe₂ has attracted more and more attention due to its unique structure and properties, and has shown great application potential in many fields such as electricity and optics. In particular, single-layer MoSe₂ is a semiconductor with direct band gap (band gap width is about 1.55eV), which can be used in field effect transistors and optoelectronic devices. However, in order to realize the practical application of MoSe₂, it is necessary to prepare large area and high quality MoSe₂ crystal first. Therefore, how to obtain monolayer MoSe₂ crystal with directional growth is always a big challenge. Through investigating a large number of existing research literature, this paper summarizes the preparation of MoSe₂ with controllable layer number, size and crystal quality by chemical vapor deposition (CVD) on SiO₂/Si substrate surface. It is hoped to provide valuable references for researchers engaged in this field. This paper includes:

1)      The structure and preparation methods of MoSe₂ are briefly introduced;

2)      By analyzing and summarizing Various factors in CVD growth process, six factors that have important influence on the shape, size and layer number of MoSe₂ are obtained, which are the selection and proportion of precursor, the distance and placement of substrate and precursor, carrier gas flow and composition ratio, reaction temperature, reaction time and the auxiliary effect of NaCl.