忆阻器作为一种两端非线性电子器件，在非易失存储、可重构逻辑、模拟电路和类脑计算等领域都有着广阔的应用前景。忆阻器的迅速发展也对理解忆阻器的阻变机理提出了更高的要求，忆阻器在阻变过程中会发生电化学反应产生气体，并且会在忆阻器的电极上留下气泡。本文中我们主要采用微电子加工工艺，制备了基于不同氧化物(HfO2, Ta2O5)，不同电极材料（活性、惰性）的忆阻器。通过电学表征测量忆阻器的阻变特性，并通过原位光学显微镜实时观察了器件中由于电化学反应所导致的气泡产生。通过扫描电子显微镜、能谱分析和截面高分辨透射电子显微镜等手段，深入表征了不同忆阻器体系中界面电化学反应的区别。发现在基于惰性电极的忆阻器中，阳极和阴极分别发生氧空位和氢氧根离子产生的电化学反应过程，而在活性电极忆阻器中，由于活性金属电极的引入，阳极和阴极的电化学反应，分别转化成了活性金属离子和氢氧根离子产生的电化学反应。本工作获得的对于忆阻器系统中界面电化学反应的理解，对于未来期间的性能优化和应用起到了重要的作用。

Memristor is a kind of two-terminal device which has a broad application prospect in nonvolatile memory, reconfigurable logic, analog circuits as well as neuromorphic computing. The fast development of memristor also demands better understanding of the resistive switching mechanism of memristor. Memristor produces gas during the resistive switching process which leaves bubbles on the top electrode of memristor. In this paper, we mainly use microelectronic processing technology to prepare memristors based on different oxides (HfO2, Ta2O5), different electrode materials (active, inert). The resistive characteristics of the memristor were measured by electrical characterization, and the bubble generation due to the electrochemical reaction in the device was observed through an in-situ optical microscope. Through scanning electron microscopy, energy dispersive x-ray spectroscopy and cross-section high-resolution transmission electron microscopy, the differences in interface electrochemical reactions in different memristor systems were thoroughly characterized. It is found that in an inactive electrode memristor, electrochemical reactions produce oxygen vacancies and hydroxide ions occur at the anode and the cathode, respectively. However, in an active electrode memristor, due to the introduction of an active metal electrode, the electrochemical reactions at the anode and the cathode, are changed into electrochemical reactions produce metal ions and hydroxide ions, respectively. The understanding of the interface electrochemical reaction in the memristor system obtained by this work has played an important role in the performance optimization and application in the future.