ZnS 是一种重要的半导体材料，在许多领域都有广泛的应用，ZnS 薄膜是一种常见的应用形式，广泛应用于各种光电器件。不同条件下制备的ZnS 薄膜性能有所不同，本文利用高真空蒸法薄膜制备系统在不同衬底温度和不同衬底材料下制备了 ZnS 薄膜，并使用 X 射线衍射仪、椭偏仪等设 备研究了 ZnS 薄膜样品的晶体结构、均匀性和光学特性，讨论了衬底温度 和衬底材料对于制备 ZnS 薄膜的影响。实验结果表明，热蒸发法制备的 ZnS 薄膜为立方闪锌矿结构，且主要为（111）晶向；薄膜的结晶性、折射 率和消光系数会随衬底温度的变化而改变，在 300℃左右薄膜质量较好； 此外，不同的衬底材料也会影响 ZnS 薄膜的性质，与石英、Si（100）两种 衬底相比，以 C 面蓝宝石为衬底能得到晶体结构更好的 ZnS 薄膜。

ZnS is an important semiconductor material with a wide range of applications in many fields, and ZnS thin films are a common form of application and are widely used in various optoelectronic devices. The properties of ZnS thin films prepared under different conditions are different. In this paper, ZnS thin films were prepared under different substrate temperatures and different substrate materials using a high vacuum evaporation thin film preparation system, and the crystal structure, homogeneity and optical properties of ZnS thin film samples were investigated using X-ray diffractometer and ellipsometer, and the effects of substrate temperature and substrate material on the preparation of ZnS thin films were discussed. The experimental results show that the ZnS films prepared by thermal evaporation are cubic sphalerite structure and mainly in the (111) direction; the crystallinity,refractive index and extinction coefficient of the films change with the change of substrate temperature, and the quality of the films is better around 300 ℃. Compared with quartz and Si(100) substrates, C-surface sapphire can be used as the substrate to obtain ZnS films with better crystal structure.