本文利用 SSH 模型讨论了一维拓扑绝缘体在左基元和右基元上的纠缠特
性。首先介绍了文献[1] 中对厄米情形下一维手征对称的拓扑绝缘体的纠缠熵具有 2ln2|I| 的下界的证明，其中 I 为缠绕数，然后在数值上验证了这一结论的正确性。较重点研究了非厄米拓扑绝缘体的纠缠熵，通过数值计算，发现它也是具有下界的。

This paper discusses the entanglement properties of onedimensional topological insulators in left and right primitives using the SSH model. First, we show that the entanglement entropy of onedimensional chiral symmetric topological insulator in the Hermitian case has a lower bound of 2ln2|I| using the method introduced in the paper[1], where I is the Winding number. We verify this conclusion numerically. We focus on the entanglement entropy of nonHermitian model. Through numerical calculations, we find that it also has a lower bound.