本论文采用磁过滤阴极真空弧(FCVA)沉积技术制备类金刚石薄膜(DLC)和纳米复合膜nc-Cu/a-C:H。改变制备薄膜的工艺参数，通过拉曼光谱(Raman)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、X射线衍射(XRD)、纳米压痕测试研究薄膜的成分、结构和性能的变化。在Si(100)衬底上沉积类金刚石薄膜，研究基底负偏压(0~1000 V)对薄膜内应力的影响。结果发现：随着偏压的增大，DLC膜的本征内应力呈现先增大后减小的趋势，在负偏压为100 V时，本征内应力达到最大值11.2 Gpa，应力的大小跟sp3含量正相关；薄膜刻蚀后Si表面处于压应力状态，表明DLC膜中的应力可以转移到Si沟道中，可以用在CMOS器件中用以提高p沟道的载流子迁移率。以Cu为阴极，以乙炔(C2H2)为反应气体，制备纳米复合膜nc-Cu/a-C:H。研究气体流量(20~90 sccm)和基底负偏压(50~500 V)对薄膜成分和结构的影响，结果发现：随着乙炔气体流量的增大，薄膜中的Cu含量减小，薄膜的沉积速率逐渐上升；随着基底负偏压增大，Cu含量先上升后下降，当偏压为300 V时Cu含量最高，而薄膜的沉积速率逐渐下降。随着气体流量增大薄膜硬度逐渐增大，当流量为90 sccm时，硬度达到最大值13.1 Gpa，同时sp3含量最高。随着基底负偏压增大，sp3含量和内应力在50~200 V范围内逐渐增大，而后随着偏压的增大而减小。

In this paper, diamond-like carbon (DLC) and nanocomposite nc-Cu/a-C:H films were prepared by filtered cathodic vacuum arc (FCVA) technique. The composition, microstructure and properties of the films prepared under different parameters were studied by Raman spectra, X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Nanoindentation.DLC films were deposited on Si (100) substrate and the compressive stress in the films varying with negative bias voltage was investigated. It is found that with the increase of bias voltage, the compressive stress in the DLC films firstly increases to the maximum value 11.2 Gpa and then decreases with higher voltage. The sp3 content follows the similar trend with stress. After DLC patterning, the silicon surface is found to be at the compressive state. This indicates that the DLC creates strain in Si channel and as a result, it enhances channel transporting hole mobility effectively in CMOS device. Nanocomposite nc-Cu/a-C:H films were synthesized using the copper as cathode and C2H2 as the precursor. The result shows that the C2H2 flow rate and the negative bias voltage can affect the composition and microstructure of nanocomposite nc-Cu/a-C:H films. With varying C2H2 flow rate, Cu content in the films decreases and the deposition rate gradually increases. With the increase in the bias voltage, Cu content increases firstly from 50~300 V and then declines with higher voltage while the deposition rate decreases continuously. The hardness and sp3 content of nanocomposite nc-Cu/a-C:H films are proportional to the C2H2 flow rate and reach the maximum values when 90 sccm flow rate. The stress and sp3 content present the similar trend with the bias voltage, increasing during the range from 50 V to 200 V and then decreasing with higher voltage.